发明授权
- 专利标题： Dielectric material with reduced dielectric constant and methods of manufacturing the same
- 专利标题（中）： 具有降低介电常数的介电材料及其制造方法
-
申请号： US11360350申请日： 2006-02-23
-
公开(公告)号： US07732322B2公开(公告)日： 2010-06-08
- 发明人: Louis Lu-Chen Hsu , Jack Allan Mandelman , Chih-Chao Yang
- 申请人： Louis Lu-Chen Hsu , Jack Allan Mandelman , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
In a first aspect, a first method of manufacturing a dielectric material with a reduced dielectric constant is provided. The first method includes the steps of (1) forming a dielectric material layer including a trench on a substrate; and (2) forming a cladding region in the dielectric material layer by forming a plurality of air gaps in the dielectric material layer along at least one of a sidewall and a bottom of the trench so as to reduce an effective dielectric constant of the dielectric material. Numerous other aspects are provided.
公开/授权文献
信息查询
IPC分类:
