发明授权
- 专利标题： Electrical fuse structure for higher post-programming resistance
- 专利标题（中）： 电熔丝结构，具有更高的后编程电阻
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申请号： US11683071申请日： 2007-03-07
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公开(公告)号： US07732893B2公开(公告)日： 2010-06-08
- 发明人: Subramanian S. Iyer , Deok-Kee Kim , Chandrasekharan Kothandaraman , Byeongju Park
- 申请人： Subramanian S. Iyer , Deok-Kee Kim , Chandrasekharan Kothandaraman , Byeongju Park
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/036
摘要：
The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.