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公开(公告)号：US07732893B2
公开(公告)日：2010-06-08
申请号：US11683071
申请日：2007-03-07
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.
摘要翻译： 本发明提供一种用于实现具有更高电阻值的后编程电阻分布并提高电熔丝编程的可靠性的电熔丝结构。 公开了在阴极中与掺杂了P掺杂的半导体材料结合在阴极中的未掺杂半导体材料的部分掺杂的电熔丝结构，并且示出了所公开的电熔丝的优异性能的数据。
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2.发明授权Three-terminal antifuse structure having integrated heating elements for a programmable circuit 有权具有用于可编程电路的集成加热元件的三端反熔丝结构公开(公告)号：US09184129B2
公开(公告)日：2015-11-10
申请号：US13004129
申请日：2011-01-11
IPC分类号： H01L23/525 , H01L27/112 , G11C17/16
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
摘要翻译： 本发明提供了具有集成加热元件的反熔丝结构及其编程方法，反熔丝结构包括第一和第二导体以及形成在导体之间的介电层，其中一个或两个导体用作传统的反熔丝导体和 作为用于在编程期间直接加热反熔丝介电层的加热元件。
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公开(公告)号：US07982285B2
公开(公告)日：2011-07-19
申请号：US11970750
申请日：2008-01-08
IPC分类号： H01L23/52
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
摘要翻译： 本发明提供了具有集成加热元件的反熔丝结构及其编程方法，反熔丝结构包括第一和第二导体以及形成在导体之间的电介质层，其中一个或两个导体用作传统的反熔丝导体和 作为用于在编程期间直接加热反熔丝介电层的加热元件。
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4.发明授权Four-terminal antifuse structure having integrated heating elements for a programmable circuit 有权具有用于可编程电路的集成加热元件的四端反熔丝结构公开(公告)号：US07880266B2
公开(公告)日：2011-02-01
申请号：US11949569
申请日：2007-12-03
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L23/52 , H01L23/525 , H01L21/768 , H01L27/01 , H01L21/82 , H01L21/326 , H01L21/479 , H01H37/76 , H01H85/00 , G11C17/18
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
摘要翻译： 本发明提供了具有集成加热元件的反熔丝结构及其编程方法，反熔丝结构包括第一和第二导体以及形成在导体之间的电介质层，其中一个或两个导体用作传统的反熔丝导体和 作为用于在编程期间直接加热反熔丝介电层的加热元件。
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5.发明申请公开(公告)号：US20080186760A1
公开(公告)日：2008-08-07
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
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6.发明申请FOUR-TERMINAL ANTIFUSE STRUCTURE HAVING INTEGRATED HEATING ELEMENTS FOR A PROGRAMMABLE CIRCUIT 有权具有可编程电路的集成加热元件的四端抗结构公开(公告)号：US20110101496A1
公开(公告)日：2011-05-05
申请号：US13004129
申请日：2011-01-11
IPC分类号： H01L23/525 , H01L21/326
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
摘要翻译： 本发明提供了具有集成加热元件的反熔丝结构及其编程方法，反熔丝结构包括第一和第二导体以及形成在导体之间的电介质层，其中一个或两个导体用作传统的反熔丝导体和 作为用于在编程期间直接加热反熔丝介电层的加热元件。
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公开(公告)号：US07227207B2
公开(公告)日：2007-06-05
申请号：US10906718
申请日：2005-03-03
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/10 , G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides a dense semiconductor fuse array having common cathodes. The dense semiconductor fuse array of the present invention occupies less area than conventional semiconductor fuse arrays, can comprise integrated diodic components, and can require only one metal wiring layer for making electrical connections to the fuse array.
摘要翻译： 本发明提供一种具有共同阴极的致密半导体熔丝阵列。 本发明的致密半导体熔丝阵列占据比常规半导体熔丝阵列小的面积，可以包括集成二极管部件，并且仅需要一个金属布线层来与熔丝阵列进行电连接。
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公开(公告)号：US20080217733A1
公开(公告)日：2008-09-11
申请号：US11683071
申请日：2007-03-07
IPC分类号： H01L23/58
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.
摘要翻译： 本发明提供一种用于实现具有更高电阻值的后编程电阻分布并提高电熔丝编程的可靠性的电熔丝结构。 公开了在阴极中与掺杂了P掺杂的半导体材料结合在阴极中的未掺杂半导体材料的部分掺杂的电熔丝结构，并且示出了所公开的电熔丝的优异性能的数据。
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9.发明授权Programmable fuse/non-volatile memory structures using externally heated phase change material 有权使用外部加热相变材料的可编程保险丝/非易失性存储器结构公开(公告)号：US07411818B1
公开(公告)日：2008-08-12
申请号：US11672110
申请日：2007-02-07
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。
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10.发明申请PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL 审中-公开可编程保险丝/非易失性存储器结构使用外部加热相变材料公开(公告)号：US20080285335A1
公开(公告)日：2008-11-20
申请号：US12127909
申请日：2008-05-28
申请人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
发明人： Bruce G. Elmegreen , Subramanian S. Iyer , Deok-Kee Kim , Lia Krusin-Elbaum , Dennis M. Newns , Byeongju Park
IPC分类号： G11C11/00
CPC分类号： H01L27/2436 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。
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