发明授权
US07732930B2 Semiconductor device, relay chip, and method for producing relay chip
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半导体装置,继电器芯片及其制造方法
- 专利标题: Semiconductor device, relay chip, and method for producing relay chip
- 专利标题(中): 半导体装置,继电器芯片及其制造方法
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申请号: US11851118申请日: 2007-09-06
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公开(公告)号: US07732930B2公开(公告)日: 2010-06-08
- 发明人: Eiichi Makino , Shigeo Ohshima , Naohisa Okumura
- 申请人: Eiichi Makino , Shigeo Ohshima , Naohisa Okumura
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-241656 20060906; JP2006-282693 20061017
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
A semiconductor device including a circuit substrate including n number of terminals; a semiconductor chip provided on the circuit substrate and including n number of terminals; and a relay chip including a triangular substrate having a first side, a second side and a third side which form triangle, n number of first terminals located along the first side, n number of second terminals located along the second side, and a plurality of wires connecting the first terminals and the second terminals respectively; a first wire connecting each of the n number of terminals of the circuit substrate to a corresponding first terminal among the n number of first terminals; and a second wire connecting each of the n number of terminals of the semiconductor chip to a corresponding second terminal among the n number of second terminals.
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