发明授权
- 专利标题： Laser beam irradiation method and method of manufacturing a thin firm transistor
- 专利标题（中）： 激光束照射方法和制造薄晶体管的方法
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申请号： US11704206申请日： 2007-02-09
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公开(公告)号： US07736917B2公开(公告)日： 2010-06-15
- 发明人: Akihisa Shimomura , Kenji Kasahara , Aiko Shiga , Hidekazu Miyairi , Koichiro Tanaka , Koji Dairiki
- 申请人： Akihisa Shimomura , Kenji Kasahara , Aiko Shiga , Hidekazu Miyairi , Koichiro Tanaka , Koji Dairiki
- 申请人地址： unknown Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： unknown Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2001-401826 20011228
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.
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