发明授权
- 专利标题: Quantum dot array and production method therefor, and dot array element and production method therefor
- 专利标题(中): 量子点阵列及其制作方法,以及点阵元件及其制作方法
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申请号: US11791445申请日: 2005-11-24
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公开(公告)号: US07737046B2公开(公告)日: 2010-06-15
- 发明人: Yasuhiko Takeda , Tomoyoshi Motohiro
- 申请人: Yasuhiko Takeda , Tomoyoshi Motohiro
- 申请人地址: JP Toyota-shi, Aichi-ken
- 专利权人: Toyota Jidosha Kabushiki Kaisha
- 当前专利权人: Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址: JP Toyota-shi, Aichi-ken
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权: JP2004-339625 20041124; JP2005-236057 20050816
- 国际申请: PCT/JP2005/022029 WO 20051124
- 国际公布: WO2006/057425 WO 20060601
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
The present invention is a method of manufacturing a quantum dot array having a plurality of columnar parts including a quantum dot on a substrate, the method comprising the steps of obliquely vapor-depositing a material constituting a first barrier layer to become an energy barrier against the quantum dot onto a surface of the substrate, so as to form a plurality of first barrier layers; obliquely vapor-depositing a material constituting the quantum dot with respect to the surface of the substrate, so as to form the quantum dots on the first barrier layers; and obliquely vapor-depositing a material constituting a second barrier layer to become an energy barrier against the quantum dot with respect to the surface of the substrate, so as to form the second barrier layers on the quantum dots.