发明授权
US07737429B2 Nitride based semiconductor device using nanorods and process for preparing the same
有权
使用纳米棒的基于氮化物的半导体器件及其制备方法
- 专利标题： Nitride based semiconductor device using nanorods and process for preparing the same
- 专利标题（中）： 使用纳米棒的基于氮化物的半导体器件及其制备方法
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申请号： US11204226申请日： 2005-08-16
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公开(公告)号： US07737429B2公开(公告)日： 2010-06-15
- 发明人: Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
- 申请人： Min Ho Kim , Masayoshi Koike , Kyeong Ik Min , Seong Suk Lee , Sung Hwan Jang
- 申请人地址： KR Kyungki-Do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Kyungki-Do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2004-0087202 20041029
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.