公开(公告)号：US07718992B2

公开(公告)日：2010-05-18

申请号：US11525012

申请日：2006-09-22

申请人： Jong Hak Won ,  Soo Han Kim ,  Jae Woong Han ,  Seong Suk Lee

发明人： Jong Hak Won ,  Soo Han Kim ,  Jae Woong Han ,  Seong Suk Lee

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173

摘要： A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.

摘要翻译： 提供一种氮化物半导体器件。 在器件中，形成第一和第二导电型氮化物层。 在第一和第二导电型氮化物层之间形成有源层。 有源层包括至少一个量子势垒层和至少一个量子阱层。 而且，在第一导电型氮化物层和有源层之间插入电流扩散层。 当前的扩散层的In含量大于有源层的量子阱层。

公开(公告)号：US07981714B2

公开(公告)日：2011-07-19

申请号：US12497060

申请日：2009-07-02

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US07923716B2

公开(公告)日：2011-04-12

申请号：US12188698

申请日：2008-08-08

申请人： Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L31/00

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US07915607B2

公开(公告)日：2011-03-29

申请号：US12403728

申请日：2009-03-13

申请人： Seong Suk Lee ,  Hee Seok Park ,  Jae Woong Han

发明人： Seong Suk Lee ,  Hee Seok Park ,  Jae Woong Han

IPC分类号： H01L29/06 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/342

摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.

摘要翻译： 氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。 有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。 交替层叠的结构包括单元多层结构和厚的量子势垒阱。 单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。 厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

公开(公告)号：US20100080257A1

公开(公告)日：2010-04-01

申请号：US12403728

申请日：2009-03-13

申请人： Seong Suk LEE ,  Hee Seok Park ,  Jae Woong Han

发明人： Seong Suk LEE ,  Hee Seok Park ,  Jae Woong Han

IPC分类号： H01S5/34

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0218 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/342

摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.

摘要翻译： 氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。 有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。 交替层叠的结构包括单元多层结构和厚的量子势垒阱。 单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。 厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

公开(公告)号：US20090269909A1

公开(公告)日：2009-10-29

申请号：US12497060

申请日：2009-07-02

申请人： Min Ho KIM ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho KIM ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US08466449B2

公开(公告)日：2013-06-18

申请号：US13083990

申请日：2011-04-11

申请人： Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L31/00 ,  H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US20100176374A1

公开(公告)日：2010-07-15

申请号：US12352941

申请日：2009-01-13

申请人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

发明人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

IPC分类号： H01L29/66

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor device according to an aspect of the invention may include: first and second conductive nitride semiconductor layers; and an active layer having a DH structure located between the first and second conductive nitride semiconductor layers, and including a single quantum well structure active layer having the single quantum well structure includes at least one polarization relaxation layer formed of a nitride single crystal having a higher energy band gap than the quantum well.

摘要翻译： 根据本发明的一个方面的氮化物半导体器件可以包括：第一和第二导电氮化物半导体层; 并且具有位于第一和第二导电氮化物半导体层之间的DH结构的有源层，并且包括具有单量子阱结构的单量子阱结构有源层包括至少一个偏振弛豫层，该偏振弛豫层由具有较高 能带隙比量子阱。

公开(公告)号：US07737429B2

公开(公告)日：2010-06-15

申请号：US11204226

申请日：2005-08-16

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Seong Suk Lee ,  Sung Hwan Jang

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅衬底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US20090146132A1

公开(公告)日：2009-06-11

申请号：US12188698

申请日：2008-08-08

申请人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。