发明授权
US07737498B2 Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
失效
增强的应力保持硅绝缘体上的器件和制造增强的应力保持硅绝缘体上的器件的方法
- 专利标题： Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
- 专利标题（中）： 增强的应力保持硅绝缘体上的器件和制造增强的应力保持硅绝缘体上的器件的方法
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申请号： US12116237申请日： 2008-05-07
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公开(公告)号： US07737498B2公开(公告)日： 2010-06-15
- 发明人: Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed Hickory Rankin , Robert R. Robison , William Robert Tonti
- 申请人： Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed Hickory Rankin , Robert R. Robison , William Robert Tonti
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 W. Riyon Harding
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/338
摘要：
Field effect transistor and methods of fabricating field effect transistors. The field effect transistors includes: a semiconductor substrate; a silicon oxide layer on the substrate; a stiffening layer on the silicon oxide layer; a single crystal silicon layer on the stiffening layer; a source and a drain on opposite sides of a channel region of the silicon layer; a gate electrode over the channel region and a gate dielectric between the gate electrode and the channel region.
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