发明授权
- 专利标题: Air gap spacer formation
- 专利标题(中): 气隙间隔物形成
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申请号: US12258188申请日: 2008-10-24
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公开(公告)号: US07741663B2公开(公告)日: 2010-06-22
- 发明人: Fred Hause , Anthony C. Mowry , David G. Farber , Markus E. Lenski
- 申请人: Fred Hause , Anthony C. Mowry , David G. Farber , Markus E. Lenski
- 申请人地址: KY Grand Cayman
- 专利权人: Globalfoundries Inc.
- 当前专利权人: Globalfoundries Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Ditthavong, Mori & Steiner, P.C.
- 主分类号: H01L29/772
- IPC分类号: H01L29/772 ; H01L21/336
摘要:
Miniaturized complex transistor devices are formed with reduced leakage and reduced miller capacitance. Embodiments include transistors having reduced capacitance between the gate electrode and source/drain contact, as by utilizing a low-K dielectric constant sidewall spacer material. An embodiment includes forming a gate electrode on a semiconductor substrate, forming a sidewall spacer on the side surfaces of the gate electrode, forming source/drain regions by ion implantation, forming an interlayer dielectric over the gate electrode, sidewall spacers, and substrate, and forming a source/drain contact through the interlayer dielectric. The sidewall spacers and interlayer dielectric are then removed. A dielectric material, such as a low-K dielectric material, is then deposited in the gap between the gate electrode and the source/drain contact so that an air gap is formed, thereby reducing the parasitic “miller” capacitance.
公开/授权文献
- US20100102363A1 AIR GAP SPACER FORMATION 公开/授权日:2010-04-29