发明授权
US07746717B1 Desensitizing static random access memory (SRAM) to process variation
有权
使静态随机存取存储器（SRAM）脱敏来处理变化
- 专利标题： Desensitizing static random access memory (SRAM) to process variation
- 专利标题（中）： 使静态随机存取存储器（SRAM）脱敏来处理变化
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申请号： US11899825申请日： 2007-09-07
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公开(公告)号： US07746717B1公开(公告)日： 2010-06-29
- 发明人: Tao Peng , Hsiao Hui Chen
- 申请人： Tao Peng , Hsiao Hui Chen
- 申请人地址： US CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 Kevin T. Cuenot
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A static random access memory (SRAM) can include an array of memory cells, wherein each memory cell is coupled to one of a plurality of sense amplifiers through a bitline. The SRAM also can include replica bitline circuitry including a replica bitline coupled to a replica bitline amplifier. The replica bitline amplifier can provide a strobe signal to the plurality of sense amplifiers, wherein the replica bitline amplifier includes a feedback path. An SRAM also may include a write replica circuit generating a signal when data has been written to the write replica circuit. A wordline of the memory array can be turned off responsive to the signal.
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