According to an aspect of the present invention, there is provided a semiconductor apparatus including a semiconductor substrate, a transistor formed on the semiconductor substrate, an insulating film disposed on the semiconductor substrate, a ferroelectric capacitor and an upper mask. The ferroelectric capacitor includes a lower electrode disposed on the insulating film, a ferroelectric film disposed on the lower electrode and an upper electrode disposed on the ferroelectric film. The upper mask includes a hard mask disposed on the upper electrode and a sidewall mask disposed on at least part of a sidewall of the hard mask.