发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11812534申请日: 2007-06-19
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公开(公告)号: US07750403B2公开(公告)日: 2010-07-06
- 发明人: Yutaka Shionoiri , Takuro Ohmaru
- 申请人: Yutaka Shionoiri , Takuro Ohmaru
- 申请人地址: unknown Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人地址: unknown Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2006-181374 20060630
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.
公开/授权文献
- US20080001228A1 Semiconductor device and manufacturing method thereof 公开/授权日:2008-01-03
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