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43 条记录 (耗时 0.03 秒)

    Semiconductor device and method for manufacturing the same
    2.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08692243B2

    公开(公告)日：2014-04-08

    申请号：US13083642

    申请日：2011-04-11

    申请人： Koichiro Kamata ,  Yoshiaki Ito ,  Takuro Ohmaru

    发明人： Koichiro Kamata ,  Yoshiaki Ito ,  Takuro Ohmaru

    IPC分类号： H01L29/12 ,  H01L21/8234

    CPC分类号： H01L27/1225 ,  H01L21/76254 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66772

    摘要： An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.

    摘要翻译： 目的是减少半导体器件的制造步骤的数量，以提高半导体器件的产量，或者降低半导体器件的制造成本。 本发明的一个实施例涉及半导体器件和制造半导体器件的方法。 半导体器件在衬底上包括在沟道形成区域中具有单晶半导体层的第一晶体管，与第一晶体管隔离的第二晶体管，绝缘层位于其间并具有沟道形成中的氧化物半导体层 区域，以及具有单晶半导体层和氧化物半导体层的二极管。

    Semiconductor device and manufacturing method thereof
    3.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20080001228A1

    公开(公告)日：2008-01-03

    申请号：US11812534

    申请日：2007-06-19

    申请人： Yutaka Shionoiri ,  Takuro Ohmaru

    发明人： Yutaka Shionoiri ,  Takuro Ohmaru

    IPC分类号： H01L27/12 ,  H01L21/84

    CPC分类号： H01L27/11293 ,  H01L21/76816 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11226 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/41733

    摘要： An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.

    摘要翻译： 在能够进行无线通信的半导体装置中容易提供个体识别符。 半导体器件包括：包括沟道形成区域的薄膜晶体管，包括源极区域和漏极区域的岛状半导体膜，栅极绝缘膜和栅电极; 层间绝缘膜; 形成在所述层间绝缘膜中的多个接触孔，其到达所述源极区域和所述漏极区域中的一个; 以及单个接触孔，其到达源区域和漏极区域中的另一个，其中单个接触孔的直径大于多个接触孔中的每一个的直径，并且多个接触孔的基底的面积之和 接触孔的面积等于单个接触孔的基部的面积。

    DC-DC converter, power source circuit, and semiconductor device
    5.
    发明授权
    DC-DC converter, power source circuit, and semiconductor device 有权

    公开(公告)号：US09209687B2

    公开(公告)日：2015-12-08

    申请号：US13477588

    申请日：2012-05-22

    申请人： Takuro Ohmaru

    发明人： Takuro Ohmaru

    IPC分类号： G05F1/575 ,  H02M3/157

    摘要： A DC-DC converter includes a control circuit, a switching element, and a constant-voltage generation portion which generates an output voltage on the basis of an input voltage supplied through the switching element. The control circuit includes AD converters which convert the input voltage and the output voltage, a signal processing circuit, a pulse modulation circuit, and a power supply control circuit which controls supply of a power supply voltage to the signal processing circuit in accordance with digital values of the input voltage and the output voltage. The signal processing circuit determines the duty ratio in accordance with the digital value of the output voltage, and the pulse modulation circuit controls the switching element. The signal processing circuit includes a memory device including a memory element, a capacitor for storing data of the memory element, and a transistor for controlling charge in the capacitor. The transistor includes an oxide semiconductor.

    Photoelectric conversion device and manufacturing method thereof
    6.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 有权
    光电转换装置及其制造方法

    公开(公告)号：US09099576B2

    公开(公告)日：2015-08-04

    申请号：US13100553

    申请日：2011-05-04

    申请人： Hajime Kimura ,  Yoshiaki Ito ,  Takuro Ohmaru ,  Shunpei Yamazaki

    发明人： Hajime Kimura ,  Yoshiaki Ito ,  Takuro Ohmaru ,  Shunpei Yamazaki

    IPC分类号： H02J1/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/076 ,  H02M3/158

    CPC分类号： H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/076 ,  H02M3/1584 ,  Y02E10/542 ,  Y02E10/547 ,  Y02E10/548 ,  Y10T307/658

    摘要： Generation of ripples and the decrease in the output voltage of a photoelectric conversion device are suppressed. The photoelectric conversion device includes a first photoelectric conversion element; a first voltage conversion element for converting the output voltage of the first photoelectric conversion element; a second photoelectric conversion element whose characteristic is different from the characteristic of the first photoelectric conversion element; a second voltage conversion element for converting the output voltage of the second photoelectric conversion element; and a control element for controlling timing of the first voltage conversion element and the second voltage conversion element.

    摘要翻译： 波纹的产生和光电转换装置的输出电压的降低被抑制。 光电转换装置包括第一光电转换元件; 用于转换第一光电转换元件的输出电压的第一电压转换元件; 第二光电转换元件，其特性与第一光电转换元件的特性不同; 用于转换第二光电转换元件的输出电压的第二电压转换元件; 以及用于控制第一电压转换元件和第二电压转换元件的定时的控制元件。

    Semiconductor device and driving method thereof
    7.
    发明授权
    Semiconductor device and driving method thereof 有权
    半导体装置及其驱动方法

    公开(公告)号：US08787084B2

    公开(公告)日：2014-07-22

    申请号：US13429668

    申请日：2012-03-26

    申请人： Takuro Ohmaru

    发明人： Takuro Ohmaru

    IPC分类号： G11C14/00 ,  H01L21/84 ,  H01L27/105 ,  H01L27/108 ,  H01L27/12 ,  G11C11/404 ,  H01L27/06 ,  H01L27/115

    CPC分类号： G11C14/0018 ,  G11C11/24 ,  G11C11/404 ,  G11C16/0416 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/115 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/7869

    摘要： The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output.

    摘要翻译： 存储装置包括易失性第一存储器电路和非易失性第二存储器电路，其包括其通道形成在氧化物半导体层中的晶体管。 在高频驱动的情况下，在施加电源电压的期间，数据信号被输入到第一存储电路并从第一存储电路输出，并且在供给源电压的期间的一部分期间 的源电压停止，数据信号被输入到第二存储电路。 在低频驱动的情况下，在施加电源电压的期间，将数据信号输入到第二存储电路，输入到第二存储电路的数据信号输入到第一存储电路，数据信号 输出到第一存储器电路的输入。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120293203A1

    公开(公告)日：2012-11-22

    申请号：US13471879

    申请日：2012-05-15

    申请人： Takuro OHMARU ,  Yutaka SHIONOIRI

    发明人： Takuro OHMARU ,  Yutaka SHIONOIRI

    IPC分类号： H03K19/177

    CPC分类号： H01L27/105 ,  H03K19/1776 ,  H03K19/17764 ,  H03K19/17772

    摘要： A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.

    摘要翻译： 即使停止供给电源电位，也可以进行数据保持的可编程模拟装置。 可编程电路包括并联或串联连接的单位单元，并且每个单位单元包括模拟元件。 每个单电池的导通状态在导通状态和断开状态之间变化。 每个单电池包括作为单位电池的开关的具有足够低的截止电流的第一晶体管和第二晶体管，第二晶体管的栅电极电连接到第一晶体管的源电极或漏电极 晶体管。 单电池的导通状态由第二晶体管的栅电极的电位来控制，即使在没有供电的情况下，由于第一晶体管的低截止电流也可以保持该电位。

    SEMICONDUCTOR DEVICE AND DRIVING METHOD THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND DRIVING METHOD THE SAME 有权
    半导体器件及其驱动方法

    公开(公告)号：US20110055463A1

    公开(公告)日：2011-03-03

    申请号：US12872254

    申请日：2010-08-31

    申请人： Masato ISHII ,  Yasuyuki TAKAHASHI ,  Takuro OHMARU ,  Hidetomo KOBAYASHI ,  Yutaka SHIONOIRI

    发明人： Masato ISHII ,  Yasuyuki TAKAHASHI ,  Takuro OHMARU ,  Hidetomo KOBAYASHI ,  Yutaka SHIONOIRI

    IPC分类号： G06F12/00 ,  G06F12/02

    CPC分类号： G06F12/1433 ,  G06F2212/178

    摘要： It is an object to prevent miswriting by radio in a relatively easy way in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication, in particular, in an RFID tag provided with an OTP memory or a write-once memory. Alternatively, it is an object to prevent data from being tampered. Further alternatively, it is an object to inhibit access to a memory in a relatively easy way and to inhibit reading of data in a semiconductor device which is capable of data communication (reception/transmission) through wireless communication. In a semiconductor device including a control circuit and an OTP memory, a memory includes at least a sector for preventing additional writing and an information sector. When data for preventing additional writing is written to the sector for preventing additional writing and information is written to the information sector which is electrically connected to the sector for preventing additional writing, additional writing to the information sector to which the information is written is impossible.

    摘要翻译： 本发明的目的是在能够通过无线通信进行数据通信（接收/发送）的半导体装置中以相对容易的方式防止在无线电中的错误写入，特别是在设置有OTP存储器或一次写入的RFID标签中 记忆。 或者，其目的是防止数据被篡改。 进一步地，本发明的目的是以相对简单的方式禁止对存储器的访问，并且禁止通过无线通信进行数据通信（接收/发送）的半导体装置中的数据的读取。 在包括控制电路和OTP存储器的半导体器件中，存储器至少包括用于防止额外写入的扇区和信息扇区。 当防止附加写入的数据被写入扇区以防止附加写入时，信息被写入电连接到扇区的信息扇区以防止附加写入，对写入信息的信息扇区的附加写入是不可能的。