Invention Grant
US07751229B2 SRAM memory device with improved write operation and method thereof
有权
具有改进的写操作的SRAM存储器件及其方法
- Patent Title: SRAM memory device with improved write operation and method thereof
- Patent Title (中): 具有改进的写操作的SRAM存储器件及其方法
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Application No.: US11617336Application Date: 2006-12-28
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Publication No.: US07751229B2Publication Date: 2010-07-06
- Inventor: Cyrille Dray , Francois Jacquet , Sébastien Barasinski
- Applicant: Cyrille Dray , Francois Jacquet , Sébastien Barasinski
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Fleit Gibbons Gutman Bongini & Bianco P.L.
- Agent Stephen Bongini
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A device, and a corresponding method of implementation, for SRAM memory information storage are provided. The device is powered by a supply voltage and includes an array of base cells organized in base columns, and at least one mirror column of at least one mirror cell liable to simulate the behavior of the cells in a base column. The device further includes Emulation means, in a mirror column, of the most restricting cell in a base column, Means for varying a mirror power supply voltage (VDDMMOCK) for the mirror column, and Means for copying the mirror power supply voltage in the emulated base column.
Public/Granted literature
- US20080159014A1 SRAM MEMORY DEVICE WITH IMPROVED WRITE OPERATION AND METHOD THEREOF Public/Granted day:2008-07-03
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