发明授权
- 专利标题： Phase change memory device and program method thereof
- 专利标题（中）： 相变存储器件及其编程方法
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申请号： US12168742申请日： 2008-07-07
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公开(公告)号： US07751234B2公开(公告)日： 2010-07-06
- 发明人: Kwang-Jin Lee , Du-Eung Kim , Sang-Beom Kang , Woo-Yeong Cho
- 申请人： Kwang-Jin Lee , Du-Eung Kim , Sang-Beom Kang , Woo-Yeong Cho
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR2005-86619 20050916
- 主分类号： G11C11/56
- IPC分类号： G11C11/56
摘要：
A phase change memory device includes a memory cell having a phase change material, a write driver adapted to supply a program current to the memory cell during a programming interval, and a pump circuit adapted to enhance a current supply capacity of the write driver during the programming interval. The pump circuit is activated prior to the programming interval in response to an external control signal.
公开/授权文献
- US20090003049A1 PHASE CHANGE MEMORY DEVICE AND PROGRAM METHOD THEREOF 公开/授权日：2009-01-01
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