发明授权
- 专利标题: Methods of forming and using reticles
- 专利标题(中): 形成和使用掩模版的方法
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申请号: US11750165申请日: 2007-05-17
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公开(公告)号: US07754395B2公开(公告)日: 2010-07-13
- 发明人: William Stanton , Gurtej S. Sandhu
- 申请人: William Stanton , Gurtej S. Sandhu
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: G03F1/00
- IPC分类号: G03F1/00
摘要:
Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns.
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