发明授权
- 专利标题： Method for producing semiconductor device and semiconductor producing apparatus
- 专利标题（中）： 半导体装置及半导体制造装置的制造方法
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申请号： US12158906申请日： 2008-01-09
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公开(公告)号： US07754503B2公开(公告)日： 2010-07-13
- 发明人: Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
- 申请人： Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2007-011941 20070122
- 国际申请： PCT/JP2008/050152 WO 20080109
- 国际公布： WO2008/090763 WO 20080731
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.
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