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公开(公告)号：US20120015504A1
公开(公告)日：2012-01-19
申请号：US13245497
申请日：2011-09-26
IPC分类号： H01L21/20 , H01L21/265
CPC分类号： H01L29/7854 , H01L29/66803
摘要： A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.
摘要翻译： 半导体器件包括：形成在基板上并具有上表面和侧表面的第一半导体区域; 形成在第一半导体区域的上部的第一导电类型的第一杂质区; 形成在第一半导体区域的侧部的第一导电类型的第二杂质区; 以及栅极绝缘膜，其形成为覆盖所述第一半导体区域的预定部分的至少一个侧表面和上拐角。 位于栅极绝缘膜外部的第一半导体区域的一部分的上角的曲率半径r'大于栅极绝缘膜下方的第一半导体区域的一部分的上角的曲率半径r 小于等于2r。
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公开(公告)号：US08063437B2
公开(公告)日：2011-11-22
申请号：US12193861
申请日：2008-08-19
IPC分类号： H01L29/66
CPC分类号： H01L29/7854 , H01L29/66803
摘要： A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.
摘要翻译： 半导体器件包括：形成在基板上并具有上表面和侧表面的第一半导体区域; 形成在第一半导体区域的上部的第一导电类型的第一杂质区; 形成在第一半导体区域的侧部的第一导电类型的第二杂质区; 以及栅极绝缘膜，其形成为覆盖所述第一半导体区域的预定部分的至少一个侧表面和上拐角。 位于栅极绝缘膜外部的第一半导体区域的一部分的上角的曲率半径r'大于栅极绝缘膜下方的第一半导体区域的一部分的上角的曲率半径r 小于等于2r。
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3.发明申请METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVE FIN-SHAPED SEMICONDUCTOR REGIONS 有权用于生产具有精细形状的半导体区域的半导体器件的方法公开(公告)号：US20110275201A1
公开(公告)日：2011-11-10
申请号：US13185221
申请日：2011-07-18
IPC分类号： H01L21/223
CPC分类号： H01L29/66803 , H01L29/66795 , H01L29/7854
摘要： First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
摘要翻译： 形成第一和第二栅极绝缘膜，以至少覆盖第一和第二鳍状半导体区域的上角。 位于第一栅极绝缘膜外侧的第一鳍状半导体区域的上角的曲率半径r1'大于位于第一栅极下方的第一鳍状半导体区域的上角的曲率半径r1 绝缘膜，小于或等于2×r1。 位于第二栅极绝缘膜外侧的第二鳍状半导体区域的上角的曲率半径r2'大于位于第二栅极下方的第二鳍状半导体区域的上角的曲率半径r2 绝缘膜，小于或等于2×r2。
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公开(公告)号：US08030187B2
公开(公告)日：2011-10-04
申请号：US12517477
申请日：2008-09-03
IPC分类号： H01L21/00
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/6659
摘要： A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min.
摘要翻译： 将衬底暴露于由含有杂质的气体产生的等离子体，从而用杂质掺杂衬底的表面部分，从而形成杂质区域。 使用预定的等离子体掺杂时间，其包括在等离子体在衬底上的沉积速率大于0nm / min且小于或等于5nm / min的时间范围内。
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公开(公告)号：US08004045B2
公开(公告)日：2011-08-23
申请号：US12512617
申请日：2009-07-30
CPC分类号： H01L29/66803 , H01L29/66795 , H01L29/7854
摘要： First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r1′ of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature r1 of the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r1. The radius of curvature r2′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature r2 of the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r2.
摘要翻译： 第一和第二栅极绝缘膜形成为至少覆盖第一和第二鳍状半导体区域的上角。 位于第一栅极绝缘膜外侧的第一鳍状半导体区域的上角的曲率半径r1'大于位于第一栅极下方的第一鳍状半导体区域的上角的曲率半径r1 绝缘膜，小于或等于2×r1。 位于第二栅极绝缘膜外侧的第二鳍状半导体区域的上角的曲率半径r2'大于位于第二栅极下方的第二鳍状半导体区域的上角的曲率半径r2 绝缘膜，小于或等于2×r2。
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公开(公告)号：US20080308871A1
公开(公告)日：2008-12-18
申请号：US12168686
申请日：2008-07-07
IPC分类号： H01L29/78
CPC分类号： H01L29/785 , H01L29/66803 , H01L29/78621
摘要： A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.
摘要翻译： 在基板上形成具有上表面和侧面的半导体区域。 第一杂质区形成在半导体区域的上部。 第二杂质区域形成在半导体区域的侧部。 第二杂质区的电阻率基本上等于或小于第一杂质区的电阻率。
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公开(公告)号：US20050267256A1
公开(公告)日：2005-12-01
申请号：US11139683
申请日：2005-05-31
申请人： Keiichi Nakamoto
发明人： Keiichi Nakamoto
IPC分类号： C08F265/06 , C08J3/00 , C08K3/00
CPC分类号： C08J3/00 , C08F265/06 , C08F2/22
摘要： It is an object of the present invention to provide an emulsion which can form a coating excellent in water penetration resistance as well as impregnating adhesion property, its production method, and a structure body using the emulsion. The present invention is directed to an emulsion comprising a hydrophobic resin particle (A) dispersed in a water-based medium as a resin component, wherein 20 to 60% by weight in the entire resin components including the hydrophobic resin particles (A) is a polymer emulsifier (B) and the average particle diameter of the particles contained therein is 50 nm or smaller.
摘要翻译： 本发明的目的是提供一种能够形成耐水渗透性优异的涂膜以及浸渍粘合性的乳液，其制造方法和使用该乳液的结构体。 本发明涉及一种乳液，其包含分散在作为树脂组分的水性介质中的疏水性树脂颗粒（A），其中在包含疏水性树脂颗粒（A）的整个树脂组分中的20至60重量％为 聚合物乳化剂（B），其中包含的颗粒的平均粒径为50nm以下。
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公开(公告)号：US08741985B2
公开(公告)日：2014-06-03
申请号：US12998726
申请日：2009-11-25
申请人： Kanji Nakao , Keiichi Nakamoto
发明人： Kanji Nakao , Keiichi Nakamoto
IPC分类号： C09D201/00 , C09D5/02 , C08F257/02
CPC分类号： C08F2/22 , C08F257/02 , C08K5/10 , C08K5/3412 , C08L2207/53 , C09D5/028 , C09D7/65 , C08F212/08 , C08F220/06 , C08F220/10 , C08F220/44
摘要： A resin composition for sealers as well as a resin composition for sealers and a paint composition for sealers that contains the resin composition for sealers are useful for sealers to be used with such inorganic building materials as ceramic-based building materials. The resin emulsion for sealers is a resin emulsion which contains emulsion particles having an inner layer and an outer layer. The inner layer is formed with a polymer which is formulated by means of emulsion polymerization of a monomer component containing styrene and a monomer other than the styrene, and the outer layer is formed with a polymer which is formulated by means of emulsion polymerization of a monomer component containing a carboxyl-group-containing monomer and a monomer other than the carboxyl-group-containing monomer.
摘要翻译： 用于密封剂的树脂组合物以及用于密封剂的树脂组合物和包含用于密封剂的树脂组合物的密封剂用涂料组合物可用于与诸如陶瓷基建筑材料的无机建筑材料一起使用的密封剂。 用于密封剂的树脂乳液是含有具有内层和外层的乳液颗粒的树脂乳液。 内层由聚合物形成，该聚合物通过含有苯乙烯和除苯乙烯以外的单体的单体组分的乳液聚合配制，外层由聚合物形成，该聚合物通过单体的乳液聚合 含有含羧基的单体和除了含羧基的单体以外的单体的成分。
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9.发明申请公开(公告)号：US20120183768A1
公开(公告)日：2012-07-19
申请号：US13348603
申请日：2012-01-11
申请人： Yasuhiro Kondo , Keiichi Nakamoto , Setsuo Itami , Motoki Yanai
发明人： Yasuhiro Kondo , Keiichi Nakamoto , Setsuo Itami , Motoki Yanai
IPC分类号： H01B1/22 , B32B15/098 , B82Y30/00
CPC分类号： H01B1/22 , B82Y30/00 , B82Y40/00 , Y10T428/265
摘要： A subject is to provide a material capable of obtaining a transparent conductive film having an excellent conductivity, optical transparency, environmental resistance, process resistance and close contact in a single application process, and to provide a transparent conductive film and a device element using the same. The means is to prepare a coating forming composition containing at least one kind of materials selected from the group of metal nanowires and metal nanotubes as a first component, polysaccharides and a derivative thereof as a second component, a thermosetting resin compound as a third component, and water as a fourth component to obtain a transparent conductive film by using the coating.
摘要翻译： 主题是提供能够获得在单次施加工艺中具有优异的导电性，光学透明性，耐环境性，耐加工性和紧密接触的透明导电膜的材料，并且提供透明导电膜和使用其的器件元件 。 该方法是制备含有选自金属纳米线和金属纳米管中的至少一种材料作为第一组分的成膜组合物，作为第二组分的多糖及其衍生物，作为第三组分的热固性树脂化合物， 和水作为第四组分，通过使用该涂层获得透明导电膜。
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公开(公告)号：US20110065266A1
公开(公告)日：2011-03-17
申请号：US12517477
申请日：2008-09-03
IPC分类号： H01L21/22
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/6659
摘要： A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min.
摘要翻译： 将衬底暴露于由含有杂质的气体产生的等离子体，从而用杂质掺杂衬底的表面部分，从而形成杂质区域。 使用预定的等离子体掺杂时间，其包括在等离子体在衬底上的沉积速率大于0nm / min且小于或等于5nm / min的时间范围内。
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