Invention Grant
- Patent Title: Method of manufacturing active matrix array structure
- Patent Title (中): 有源矩阵阵列结构的制造方法
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Application No.: US12102027Application Date: 2008-04-14
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Publication No.: US07754547B2Publication Date: 2010-07-13
- Inventor: Wei-Sheng Yu , Kuo-Lung Fang , Hsiang-Lin Lin , Hsien-Chieh Tseng , Han-Tu Lin
- Applicant: Wei-Sheng Yu , Kuo-Lung Fang , Hsiang-Lin Lin , Hsien-Chieh Tseng , Han-Tu Lin
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97100663A 20080108
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An active matrix array structure, disposed on a substrate, includes a first patterned conductive layer, a patterned gate insulating layer, a patterned semiconductor layer, a second patterned conductive layer, a patterned overcoat layer and a transparent conductive layer. The patterned gate insulating layer has first openings that expose a part of the first patterned conductive layer. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The second patterned conductive layer is disposed on the patterned semiconductor layer. The patterned overcoat layer has second openings that expose a part of the first patterned conductive layer and a part of the second patterned conductive layer. The transparent conductive layer is completely disposed on the substrate. The transparent conductive layer disposed in the first openings and the second openings is broken off at a position that is in between the substrate and the patterned overcoat layer.
Public/Granted literature
- US20090173943A1 ACTIVE MATRIX ARRAY STRUCTURE AND MANUFACTURING MEHTOD THEREOF Public/Granted day:2009-07-09
Information query
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