Invention Grant
US07754550B2 Process for forming thick oxides on Si or SiC for semiconductor devices
有权
用于在半导体器件的Si或SiC上形成厚氧化物的工艺
- Patent Title: Process for forming thick oxides on Si or SiC for semiconductor devices
- Patent Title (中): 用于在半导体器件的Si或SiC上形成厚氧化物的工艺
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Application No.: US10885378Application Date: 2004-07-06
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Publication No.: US07754550B2Publication Date: 2010-07-13
- Inventor: Davide Chiola , Zhi He
- Applicant: Davide Chiola , Zhi He
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.
Public/Granted literature
- US20050009255A1 Process for forming thick oxides on Si or SiC for semiconductor devices Public/Granted day:2005-01-13
Information query
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