发明授权
- 专利标题： Semiconductor device, semiconductor system and semiconductor device manufacturing method
- 专利标题（中）： 半导体器件，半导体系统和半导体器件制造方法
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申请号： US11952373申请日： 2007-12-07
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公开(公告)号： US07755147B2公开(公告)日： 2010-07-13
- 发明人: Shigeo Satoh
- 申请人： Shigeo Satoh
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device is provided with a first conductivity type semiconductor substrate (10); a voltage supplying terminal (26) arranged on the semiconductors substrate (10); one or more elements (6) which include a second conductivity type well section (22) and are arranged on the semiconductor substrate (10); a second conductivity type first conductive layer (21), which is a lower layer of the one or more elements (6), is in contact with the second conductivity type well section (22), and connects the second conductivity type well section (22) of the one or more elements (6) with the voltage supplying terminal (26); and a first conductivity type second conductive layer (11) formed in contact with a lower side of the first conductive layer (21).
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