发明授权
- 专利标题: Anti-fuse memory cell
- 专利标题(中): 防熔丝存储单元
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申请号: US11762552申请日: 2007-06-13
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公开(公告)号: US07755162B2公开(公告)日: 2010-07-13
- 发明人: Wlodek Kurjanowicz , Steven Smith
- 申请人: Wlodek Kurjanowicz , Steven Smith
- 申请人地址: CA Ottawa
- 专利权人: Sidense Corp.
- 当前专利权人: Sidense Corp.
- 当前专利权人地址: CA Ottawa
- 代理机构: Borden Ladner Gervais LLP
- 代理商 Shin Hung
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
An anti-fuse memory cell having a variable thickness gate oxide. The variable thickness gate oxide has a thick gate oxide portion and a thin gate oxide portion, where the thing gate oxide portion has at least one dimension less than a minimum feature size of a process technology. The thin gate oxide can be rectangular in shape or triangular in shape. The anti-fuse transistor can be used in a two-transistor memory cell having an access transistor with a gate oxide substantially identical in thickness to the thick gate oxide of the variable thickness gate oxide of the anti-fuse transistor.
公开/授权文献
- US20070257331A1 ANTI-FUSE MEMORY CELL 公开/授权日:2007-11-08
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