发明授权
- 专利标题： Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film
- 专利标题（中）： 压电薄膜，压电材料以及压电薄膜和压电材料的制造方法以及压电谐振器，致动器元件和使用压电薄膜的物理传感器
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申请号： US12155015申请日： 2008-05-29
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公开(公告)号： US07758979B2公开(公告)日： 2010-07-20
- 发明人: Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
- 申请人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
- 申请人地址： JP Tokyo JP Kariya
- 专利权人： National Institute of Advanced Industrial Science and Technology,DENSO CORPORATION
- 当前专利权人： National Institute of Advanced Industrial Science and Technology,DENSO CORPORATION
- 当前专利权人地址： JP Tokyo JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2007-144851 20070531; JP2008-098480 20080404
- 主分类号： B32B9/00
- IPC分类号： B32B9/00
摘要：
A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.
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