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    Capacitance type physical quantity sensor
    3.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号：US07201053B2

    公开(公告)日：2007-04-10

    申请号：US10834183

    申请日：2004-04-29

    申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P9/04

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

    Scanning apparatus
    4.
    发明申请
    Scanning apparatus 有权
    扫描仪

    公开(公告)号：US20060158713A1

    公开(公告)日：2006-07-20

    申请号：US11311181

    申请日：2005-12-20

    申请人： Yukihiro Takeuchi ,  Nobuaki Kawahara ,  Takahiko Yoshida

    发明人： Yukihiro Takeuchi ,  Nobuaki Kawahara ,  Takahiko Yoshida

    IPC分类号： G02B26/08

    CPC分类号： G02B26/12 ,  G02B26/0833 ,  G02B26/105

    摘要： A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.

    摘要翻译： 扫描装置包括经由弹簧部分耦合到基座的反射镜，以及用于将光束朝向反射镜的反射表面发射以使光束入射到其上的光源。 镜子反射来自光源的光束，并且当向其施加力时，在弹簧部分的弹性力下旋转摆动。 反射镜的反射面包括多个不同角度的镜面。 来自光源的光束被镜面以不同的角度同时反射。

    Scanning apparatus
    5.
    发明授权
    Scanning apparatus 有权
    扫描仪

    公开(公告)号：US07199914B2

    公开(公告)日：2007-04-03

    申请号：US11311181

    申请日：2005-12-20

    申请人： Yukihiro Takeuchi ,  Nobuaki Kawahara ,  Takahiko Yoshida

    发明人： Yukihiro Takeuchi ,  Nobuaki Kawahara ,  Takahiko Yoshida

    IPC分类号： G02B26/08

    CPC分类号： G02B26/12 ,  G02B26/0833 ,  G02B26/105

    摘要： A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.

    摘要翻译： 扫描装置包括经由弹簧部分耦合到基座的反射镜，以及用于将光束朝向反射镜的反射表面发射以使光束入射到其上的光源。 镜子反射来自光源的光束，并且当向其施加力时，在弹簧部分的弹性力下旋转摆动。 反射镜的反射面包括多个不同角度的镜面。 来自光源的光束被镜面以不同的角度同时反射。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    6.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Semiconductor acceleration sensor with movable electrode
    7.
    发明授权
    Semiconductor acceleration sensor with movable electrode 失效
    具有可移动电极的半导体加速度传感器

    公开(公告)号：US5572057A

    公开(公告)日：1996-11-05

    申请号：US360940

    申请日：1994-12-21

    申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

    摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

    摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解

    Semiconductor acceleration sensor with source and drain regions
    9.
    发明授权
    Semiconductor acceleration sensor with source and drain regions 失效
    具有源极和漏极区域的半导体加速度传感器

    公开(公告)号：US5627397A

    公开(公告)日：1997-05-06

    申请号：US402949

    申请日：1995-03-13

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

    摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。