发明授权
US07759142B1 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
失效
量子阱MOSFET通道由金属源/漏极引起的单轴应变，以及保形再生长源/漏极
- 专利标题： Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
- 专利标题（中）： 量子阱MOSFET通道由金属源/漏极引起的单轴应变，以及保形再生长源/漏极
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申请号： US12347268申请日： 2008-12-31
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公开(公告)号： US07759142B1公开(公告)日： 2010-07-20
- 发明人: Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- 申请人： Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.