The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc.The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm −3 and which consists of cells, each of which comprises a p− type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm−3 and which is grown on the substrate, a p− type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm−3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm−3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells. Said silicon photoelectric multiplier (variant 2) comprising a n− type conductivity substrate to which a p++-type conductivity whose dope additive concentration ranges from 1018-1020 cm−3 is applied and consists of cells, wherein in each cell a polysilicon resistor is placed on a silicon oxide layer and separating elements are disposed between the cells.