Invention Grant
- Patent Title: Method for fabricating a test structure
- Patent Title (中): 制造测试结构的方法
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Application No.: US11829104Application Date: 2007-07-27
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Publication No.: US07759957B2Publication Date: 2010-07-20
- Inventor: Wen-Hsiung Ko , Wen-Chun Chang , Kuan-Cheng Su
- Applicant: Wen-Hsiung Ko , Wen-Chun Chang , Kuan-Cheng Su
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu
- Main IPC: G01R31/02
- IPC: G01R31/02 ; H01L21/66
Abstract:
A method for fabricating a test structure, in which, a heating plate is formed on the wafer for heating a structure to be tested positioned above or adjacent to the heating plate. The heating plate produces heat by electrically connecting to a current. Thus, the heat provided by the heating plate and the electric input/output into/from the structure to be tested are controlled separately and not influenced each other.
Public/Granted literature
- US20090027074A1 Test structure and test method Public/Granted day:2009-01-29
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