发明授权
- 专利标题: Contact structure
- 专利标题(中): 接触结构
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申请号: US12480716申请日: 2009-06-09
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公开(公告)号: US07760316B2公开(公告)日: 2010-07-20
- 发明人: Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人: Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP9-094606 19970327
- 主分类号: G02F1/1345
- IPC分类号: G02F1/1345 ; G02F1/1339
摘要:
There is disclosed a contact structure for electrically connecting conducting lines formed on a first substrate of an electrooptical device such as a liquid crystal display with conducting lines formed on a second substrate via conducting spacers while assuring a uniform cell gap among different cells if the interlayer dielectric film thickness is nonuniform across the cell or among different cells. A first conducting film and a dielectric film are deposited on the first substrate. Openings are formed in the dielectric film. A second conducting film covers the dielectric film left and the openings. The conducting spacers electrically connect the second conducting film over the first substrate with a third conducting film on the second substrate. The cell gap depends only on the size of the spacers, which maintain the cell gap.
公开/授权文献
- US20090244423A1 CONTACT STRUCTURE 公开/授权日:2009-10-01