发明授权
- 专利标题： Method for programming a semiconductor memory device
- 专利标题（中）： 半导体存储器件编程方法
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申请号： US12061105申请日： 2008-04-02
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公开(公告)号： US07764542B2公开(公告)日： 2010-07-27
- 发明人: Toshiaki Edahiro , Takuya Futatsuyama , Toshiyuki Enda
- 申请人： Toshiaki Edahiro , Takuya Futatsuyama , Toshiyuki Enda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-097507 20070403
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method for programming a semiconductor memory device including such a program sequence as to program target threshold levels constituting multi-level data into multiple memory cells, which are simultaneously selected, wherein the program sequence is controlled to finish programming the multiple memory cells in order of height of the target threshold levels.
公开/授权文献
- US20080253181A1 METHOD FOR PROGRAMMING A SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2008-10-16
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