Invention Grant
- Patent Title: Fabrication method of an RF MEMS switch
- Patent Title (中): RF MEMS开关的制造方法
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Application No.: US11640198Application Date: 2006-12-18
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Publication No.: US07765681B2Publication Date: 2010-08-03
- Inventor: Jae-Yeong Park , Hee-Chul Lee
- Applicant: Jae-Yeong Park , Hee-Chul Lee
- Applicant Address: KR Seoul
- Assignee: LG Electronics Inc.
- Current Assignee: LG Electronics Inc.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2004-0003972 20040119
- Main IPC: H01H11/00
- IPC: H01H11/00 ; H01H65/00

Abstract:
A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.
Public/Granted literature
- US20070094864A1 RF MEMS switch and fabrication method thereof Public/Granted day:2007-05-03
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