Invention Grant
- Patent Title: Patterning method and field effect transistors
- Patent Title (中): 图案化方法和场效应晶体管
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Application No.: US10575916Application Date: 2004-09-28
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Publication No.: US07767100B2Publication Date: 2010-08-03
- Inventor: Rodger Fehlhaber , Helmut Tews
- Applicant: Rodger Fehlhaber , Helmut Tews
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Priority: DE10348007 20031015
- International Application: PCT/EP2004/052333 WO 20040928
- International Announcement: WO2005/038930 WO 20050428
- Main IPC: C25F3/00
- IPC: C25F3/00 ; H01L21/336 ; H01L21/302 ; H01L21/461
Abstract:
A patterning method with a filling material with a T-shaped cross section is used as a mask during patterning to produce structures having sublithographic dimensions, such as a double-fin field effect transistor.
Public/Granted literature
- US20070131981A1 Patterning method and field effect transistors Public/Granted day:2007-06-14
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