Invention Grant
- Patent Title: Method for manufacturing zinc oxide nanowires and device having the same
- Patent Title (中): 氧化锌纳米线的制造方法及其制造方法
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Application No.: US11485097Application Date: 2006-07-12
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Publication No.: US07767140B2Publication Date: 2010-08-03
- Inventor: Yo-sep Min , Eun-ju Bae , Wan-jun Park
- Applicant: Yo-sep Min , Eun-ju Bae , Wan-jun Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0000164 20060102
- Main IPC: C22C18/00
- IPC: C22C18/00

Abstract:
A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.
Public/Granted literature
- US20070154385A1 Method for manufacturing zinc oxide nanowires and device having the same Public/Granted day:2007-07-05
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