Invention Grant
US07767433B2 High voltage nanosecond pulse generator using fast recovery diodes for cell electro-manipulation
有权
高电压纳秒脉冲发生器采用快速恢复二极管进行电池电操作
- Patent Title: High voltage nanosecond pulse generator using fast recovery diodes for cell electro-manipulation
- Patent Title (中): 高电压纳秒脉冲发生器采用快速恢复二极管进行电池电操作
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Application No.: US11279697Application Date: 2006-04-13
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Publication No.: US07767433B2Publication Date: 2010-08-03
- Inventor: Andras Kuthi , Martin A. Gundersen
- Applicant: Andras Kuthi , Martin A. Gundersen
- Applicant Address: US CA Los Angeles
- Assignee: University of Southern California
- Current Assignee: University of Southern California
- Current Assignee Address: US CA Los Angeles
- Agency: McDermott Will & Emery LLP
- Main IPC: C12N1/42
- IPC: C12N1/42 ; C12M3/00

Abstract:
A pulse generator circuit may include a diode configured to operate as an opening switch, a tank circuit in series with the diode having an admittance that is switchable from a first value to a second value that is different from the first value, and a switching system configured to cause the tank circuit to switch between the first value and the second value. The diode may saturate in less than 100 nanoseconds. A saturable core transformer may operate as a switch that controls the opening of the diode. The pulse generator may generate a plurality of pulses, each having a length of no more than 3 nanoseconds and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver the plurality of pulses to biological cells.
Public/Granted literature
- US20070031959A1 High Voltage Nanosecond Pulse Generator Using Fast Recovery Diodes for Cell Electro-manipulation Public/Granted day:2007-02-08
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