Invention Grant
- Patent Title: Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors
- Patent Title (中): 半导体组成分级方法实现低电阻分布布拉格反射器
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Application No.: US11063230Application Date: 2005-02-22
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Publication No.: US07767480B1Publication Date: 2010-08-03
- Inventor: Gregory Pickrell , Duane A. Louderback , Peter Guilfoyle
- Applicant: Gregory Pickrell , Duane A. Louderback , Peter Guilfoyle
- Applicant Address: US NV Zephyr Cove
- Assignee: Opticomp Corporation
- Current Assignee: Opticomp Corporation
- Current Assignee Address: US NV Zephyr Cove
- Agency: DLA Piper LLP (US)
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.
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