Invention Grant
US07767521B2 Cell region layout of semiconductor device and method of forming contact pad using the same
有权
半导体器件的单元区域布局和使用其形成接触焊盘的方法
- Patent Title: Cell region layout of semiconductor device and method of forming contact pad using the same
- Patent Title (中): 半导体器件的单元区域布局和使用其形成接触焊盘的方法
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Application No.: US12565801Application Date: 2009-09-24
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Publication No.: US07767521B2Publication Date: 2010-08-03
- Inventor: Cheol-ho Baek
- Applicant: Cheol-ho Baek
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2005-0030430 20050412
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L21/20

Abstract:
A cell region layout of a semiconductor device formed by adding active regions in the outermost portion of a cell region, and a method of forming a contact pad using the same are provided. The layout and the method include a first active region formed at the outermost portion of the cell region, and having the same shape as that of an inner active region located inwardly from the outermost portion of the cell region, and a third active region formed by adding at least two second active regions having shapes different from that of an inner active region. Further, an insulating layer fills a portion below a bit line passing the third active region. A lifting phenomenon occurring where an active region is not formed can be prevented by adding the active regions at the outermost portion of the cell region, and a bridge phenomenon occurring when bit lines or a bit line contact and a gate line electrically contact can be suppressed by filling a portion below a bit line with an insulating layer.
Public/Granted literature
- US20100015767A1 CELL REGION LAYOUT OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING CONTACT PAD USING THE SAME Public/Granted day:2010-01-21
Information query
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