Simplified method of fabricating isolated and merged trench capacitors

Invention Grant

US07767537B2 Simplified method of fabricating isolated and merged trench capacitors 失效

Title translation: 制造隔离和合并沟槽电容器的简化方法

Please log in to see more content

Patent Title: Simplified method of fabricating isolated and merged trench capacitors
Patent Title (中): 制造隔离和合并沟槽电容器的简化方法
Application No.: US11873735

Application Date: 2007-10-17
Publication No.: US07767537B2

Publication Date: 2010-08-03
Inventor: Kangguo Cheng
Applicant: Kangguo Cheng
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Joseph Petrokaitis; Daryl K. Neff
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/20

Simplified method of fabricating isolated and merged trench capacitors

Abstract:

Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger capacitors are formed when the openings in the photomask are aligned with one crystal plane of the semiconductor substrate causing the resulting trenches in the semiconductor substrate to merge. Smaller capacitors are formed when the openings in the photomask are aligned with another crystal plane of the semiconductor substrate in which case each trench remains separate from other trenches.

Abstract(Chinese):

可以使用组合光刻工艺同时形成具有小尺寸和大尺寸的沟槽电容器，其中光掩模中的开口具有相同的尺寸和间隔。当光掩模中的开口与半导体衬底的一个晶面对准，导致半导体衬底中的所得沟槽合并时，形成较大的电容器。当光掩模中的开口与半导体衬底的另一晶体平面对准时，形成较小的电容器，在这种情况下，每个沟槽保持与其它沟槽分离。

Public/Granted literature

US20090101957A1 SIMPLIFIED METHOD OF FABRICATING ISOLATED AND MERGED TRENCH CAPACITORS Public/Granted day:2009-04-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）