Invention Grant
US07767567B2 Method of forming a semiconductor memory device and semiconductor memory device
有权
形成半导体存储器件和半导体存储器件的方法
- Patent Title: Method of forming a semiconductor memory device and semiconductor memory device
- Patent Title (中): 形成半导体存储器件和半导体存储器件的方法
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Application No.: US11541404Application Date: 2006-09-29
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Publication No.: US07767567B2Publication Date: 2010-08-03
- Inventor: Josef Willer , Franz Hofmann
- Applicant: Josef Willer , Franz Hofmann
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/3205
- IPC: H01L21/3205
Abstract:
Gate stacks of an array of memory cells and a plurality of select transistors are formed above a carrier, the gate stacks being separated by spacers. An opening is formed between the spacers in an area that is provided for a source line. A sacrificial layer is applied to fill the opening and is subsequently patterned. Interspaces are filled with a planarizing layer of dielectric material. The residues of the sacrificial layer are removed and an electrically conductive material is applied to form a source line.
Public/Granted literature
- US20080096352A1 Method of forming a semiconductor memory device and semiconductor memory device Public/Granted day:2008-04-24
Information query
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