Invention Grant
- Patent Title: Phase-change random access memory device and method of manufacturing the same
- Patent Title (中): 相变随机存取存储器件及其制造方法
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Application No.: US11951148Application Date: 2007-12-05
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Publication No.: US07767994B2Publication Date: 2010-08-03
- Inventor: Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
- Applicant: Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2006-0122618 20061205; KR10-2007-0043800 20070504
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
Public/Granted literature
- US20080128676A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-06-05
Information query
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