发明授权
- 专利标题： Phase-change random access memory device and method of manufacturing the same
- 专利标题（中）： 相变随机存取存储器件及其制造方法
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申请号： US11951148申请日： 2007-12-05
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公开(公告)号： US07767994B2公开(公告)日： 2010-08-03
- 发明人: Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
- 申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2006-0122618 20061205; KR10-2007-0043800 20070504
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
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