Invention Grant
- Patent Title: Single-chip common-drain JFET device and its applications
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Application No.: US12385720Application Date: 2009-04-17
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Publication No.: US07768033B2Publication Date: 2010-08-03
- Inventor: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- Applicant: Liang-Pin Tai , Jing-Meng Liu , Hung-Der Su
- Applicant Address: TW Hsnchu
- Assignee: Richtek Technology Corp.
- Current Assignee: Richtek Technology Corp.
- Current Assignee Address: TW Hsnchu
- Agency: Rosenberg, Klein & Lee
- Priority: TW93118436A 20040625
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111

Abstract:
A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.
Public/Granted literature
- US20090201079A1 Single-chip common-drain JFET device and its applications Public/Granted day:2009-08-13
Information query
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