Invention Grant
- Patent Title: Structure and method for improving shielded gate field effect transistors
- Patent Title (中): 屏蔽栅场效应晶体管的结构和方法
-
Application No.: US11620002Application Date: 2007-01-04
-
Publication No.: US07768064B2Publication Date: 2010-08-03
- Inventor: Steven Sapp , Ashok Challa , Christopher B. Kocon
- Applicant: Steven Sapp , Ashok Challa , Christopher B. Kocon
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A field effect transistor is disclosed. In one embodiment, the field effect transistor includes a trench extending into a drift region of the field effect transistor. A shield electrode in a lower portion of the trench is insulated from the drift region by a shield dielectric. A gate electrode in the trench over the shield electrode is insulated from the shield electrode by an inter-electrode dielectric. A source region is formed adjacent the trench. A resistive element is coupled to the shield electrode and to a source region in the field effective transistor.
Public/Granted literature
- US20080017920A1 STRUCTURE AND METHOD FOR IMPROVING SHIELDED GATE FIELD EFFECT TRANSISTORS Public/Granted day:2008-01-24
Information query
IPC分类:
