Invention Grant
- Patent Title: Power semiconductor device having improved performance and method
- Patent Title (中): 功率半导体器件具有改进的性能和方法
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Application No.: US12236947Application Date: 2008-09-24
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Publication No.: US07768078B2Publication Date: 2010-08-03
- Inventor: Gary H. Loechelt , Peter J. Zdebel
- Applicant: Gary H. Loechelt , Peter J. Zdebel
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, L.L.C.
- Current Assignee: Semiconductor Components Industries, L.L.C.
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region.
Public/Granted literature
- US20090014814A1 POWER SEMICONDUCTOR DEVICE HAVING IMPROVED PERFORMANCE AND METHOD Public/Granted day:2009-01-15
Information query
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