Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12203524Application Date: 2008-09-03
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Publication No.: US07768118B2Publication Date: 2010-08-03
- Inventor: Hiroshi Yoshida , Tatsuo Ota , Nobutake Taniguchi , Shingo Sudo
- Applicant: Hiroshi Yoshida , Tatsuo Ota , Nobutake Taniguchi , Shingo Sudo
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-166991 20080626
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L23/495

Abstract:
A semiconductor device has a substrate, a semiconductor element, an electrode lead, and a sealing resin portion. The substrate has a main surface on which a circuit pattern is formed. The semiconductor element has first and second surfaces, and is arranged on the substrate such that the first surface faces the main surface. The electrode lead has one end joined to the circuit pattern and the other end joined by soldering to the second surface. The other end has a plurality of portions divided from each other. The sealing resin portion seals the semiconductor element and the electrode lead. Thus, there can be provided a semiconductor device that has relieved thermal stress at a joining portion of the electrode lead, and therefore is less subject to fatigue failure.
Public/Granted literature
- US20090321900A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-12-31
Information query
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