Barrier formation and structure to use in semiconductor devices

Invention Grant

US07768126B2 Barrier formation and structure to use in semiconductor devices 有权

Title translation: 阻挡层形成和结构用于半导体器件

Patent Title: Barrier formation and structure to use in semiconductor devices
Patent Title (中): 阻挡层形成和结构用于半导体器件
Application No.: US11540199

Application Date: 2006-09-29
Publication No.: US07768126B2

Publication Date: 2010-08-03
Inventor: Kevin Fischer , Vinay Chikarmane , Brennan Peterson
Applicant: Kevin Fischer , Vinay Chikarmane , Brennan Peterson
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Lee & Hayes, PLLC
Main IPC: H01L23/48
IPC: H01L23/48

Abstract:

Embodiments of barriers to use in semiconductor devices are presented herein.

Abstract(Chinese):

这里给出了在半导体器件中使用的屏障的实施例。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置