Invention Grant
US07768181B2 Electron multiplier electrode and terahertz radiation source using the same
有权
电子倍增器电极和太赫兹辐射源使用相同
- Patent Title: Electron multiplier electrode and terahertz radiation source using the same
- Patent Title (中): 电子倍增器电极和太赫兹辐射源使用相同
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Application No.: US12007186Application Date: 2008-01-08
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Publication No.: US07768181B2Publication Date: 2010-08-03
- Inventor: Chan-wook Baik , Yong-wan Jin , Sun-il Kim , Min-jong Bae
- Applicant: Chan-wook Baik , Yong-wan Jin , Sun-il Kim , Min-jong Bae
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0002168 20070108
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.
Public/Granted literature
- US20080164798A1 Electron multiplier electrode and terahertz radiation source using the same Public/Granted day:2008-07-10
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