Invention Grant
- Patent Title: Voltage level shifter circuit
- Patent Title (中): 电压电平转换电路
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Application No.: US12205764Application Date: 2008-09-05
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Publication No.: US07768335B2Publication Date: 2010-08-03
- Inventor: Jung Hyun Yo
- Applicant: Jung Hyun Yo
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney; Duangkamol Kay Strohl
- Priority: KR10-2007-0090757 20070907
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A voltage level shifter circuit is provided. A high power voltage is input to a first power voltage terminal, an enable signal is input to an enable terminal, and an intermediate voltage level between the first power voltage and a high enable signal voltage is input to a second power voltage terminal. First and second inverters are connected to the enable terminal. A first transistor has a source connected to the second inverter. A second transistor has a drain connected to a drain of the first transistor, a source connected to the second power voltage terminal, and a gate connected to an output terminal of the first inverter. Third and fourth transistors have gates connected to the outputs of the first and second transistors, the fourth transistor having a source connected to the first power voltage terminal.
Public/Granted literature
- US20090066398A1 Voltage Level Shifter Circuit Public/Granted day:2009-03-12
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