发明授权
US07768637B2 Method for acquiring high-resolution images of defects on the upper surface of the wafer edge
有权
用于在晶片边缘的上表面上获取缺陷的高分辨率图像的方法
- 专利标题： Method for acquiring high-resolution images of defects on the upper surface of the wafer edge
- 专利标题（中）： 用于在晶片边缘的上表面上获取缺陷的高分辨率图像的方法
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申请号： US12072156申请日： 2008-02-25
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公开(公告)号： US07768637B2公开(公告)日： 2010-08-03
- 发明人: Detlef Schupp , Thin Van Luu
- 申请人： Detlef Schupp , Thin Van Luu
- 申请人地址： DE Weilburg
- 专利权人： Vistec Semiconductor Systems GmbH
- 当前专利权人： Vistec Semiconductor Systems GmbH
- 当前专利权人地址： DE Weilburg
- 代理机构： Davidson, Davidson & Kappel, LLC
- 优先权： DE102007010225 20070228
- 主分类号： G01N21/00
- IPC分类号： G01N21/00
摘要：
A method for acquiring high-resolution images of defects on the upper surface of the wafer edge is disclosed. For this purpose, first the position of at least one defect on the upper surface of the wafer edge is determined. The thus determined position of the defect is stored. Then the wafer is transferred into device for micro-inspection, in which the defect is examined more closely and imaged. The images acquired in the device for micro-inspection are deposited in a directory.
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