Invention Grant
- Patent Title: Flash memory device and method of controlling flash memory device
- Patent Title (中): 闪存设备及控制闪存设备的方法
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Application No.: US12109466Application Date: 2008-04-25
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Publication No.: US07768831B2Publication Date: 2010-08-03
- Inventor: Dae-Seok Byeon , Young-Ho Lim
- Applicant: Dae-Seok Byeon , Young-Ho Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: KR10-2007-0040502 20070425
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A flash memory device includes multiple memory blocks, a decoder configured to select at least one of the memory blocks in response to block select signals, and a controller configured to generate the block select signals in response to a block address. When the block address corresponds to a bad block, the controller generates the block select signals to cause the decoder to interrupt selection of a memory block corresponding to the block address.
Public/Granted literature
- US20080266956A1 FLASH MEMORY DEVICE AND METHOD OF CONTROLLING FLASH MEMORY DEVICE Public/Granted day:2008-10-30
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