发明授权
- 专利标题: Flash memory device and method of controlling flash memory device
- 专利标题(中): 闪存设备及控制闪存设备的方法
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申请号: US12109466申请日: 2008-04-25
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公开(公告)号: US07768831B2公开(公告)日: 2010-08-03
- 发明人: Dae-Seok Byeon , Young-Ho Lim
- 申请人: Dae-Seok Byeon , Young-Ho Lim
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, P.L.L.C.
- 优先权: KR10-2007-0040502 20070425
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
A flash memory device includes multiple memory blocks, a decoder configured to select at least one of the memory blocks in response to block select signals, and a controller configured to generate the block select signals in response to a block address. When the block address corresponds to a bad block, the controller generates the block select signals to cause the decoder to interrupt selection of a memory block corresponding to the block address.
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